說實話，150~200次的寫入是要怎樣用？這樣應該連商業化成 SSD 都很難用吧？大概只能用來做低價的 USB 隨身碟。

QLC 就算能用 大概也會跟傳統硬碟一樣 過保1~2年就壞掉...

我好像預知了什摸

現在的儲存裝置真的是在比爛的 , 從SSD到SMR硬碟 , 越做越不耐用 , 還是用PMR的硬碟就好

首先，我認為QLC不可能單獨作為SSD的儲存媒體
那可笑的P/E cycle數就算搭配大容量，還是很容易就出現Bad block
但是，如果搭配IM最新的 3D X point memory，那也許QLC會是一個選項
由於3D X point memory單顆可以有256Gb的容量
讓TB等級的QLC搭配1/10的3D X point memory (EX: 1TB QLC + 128GB 3D X point)
事實上是可以做到大部分的讀寫都在 3D X point memory
而不常讀寫的資料就儲存在 QLC 裡
現在唯一擔心的可能就只有 retention 的問題了。

用容量拚啊

但是至少要好幾TB這量級的才讓人感受不到壽命的不可靠

取代光碟片
事實上 現今每GB價格低於NT.10
比當年盒裝DVD 4.7GB燒錄片還便宜

視訊媒體發行 預錄型光碟還能保有競爭力
便宜 流量就算UHD BD也足夠
但是遊戲發行就有問題了
當前遊戲市場 光碟以及2.5硬碟安裝
根本是脫褲子放屁

早年半導體昂貴時 光碟搶了市場 吐回的日子不遠了

QLC新一代消費電子垃圾 , 傳統硬碟應該差不多要離開一般消費市場了

IM(英特爾美光合資公司)的3DXpoint
是新材料的相變化記憶體
硫化玻璃加熱 結晶/非結晶的阻抗不同
2/4層以上和微縮 還得指望EUV
(EUV被產界視為救世主 期待解決眼前的問題)

HALF MOON BAY, Calif.—As 3D XPoint memory chips move out of research and into the fab, an IM Flash executive gave more details about the novel memory technology, its road map and how hard it is to make.

Intel and Micron announced in July they had defined 3D XPoint as a new memory architecture that fills a gap between DRAM and flash, delivering NAND like density at significantly higher performance and lower latency. “Chalcogenide material and an Ovonyx switch are magic parts of this technology with the original work starting back in the 1960’s,” said Guy Blalock, co-CEO of IM Flash at the Industry Strategy Symposium hosted by the SEMI trade group here.

It could take 12-18 months to get XPoint into mass production, Blalock said. He noted several challenges for making those chips as well as 3D NAND devices, both in the works at the joint venture’s Lehi, Utah fab.

“We are swimming through deep water to get to the future enabled by these new products,” Blalock said. Nevertheless he promised XPoint samples are “right around the corner… give the R&D guys a little more time to work out the kinks,” he said.

One downside of the new materials is their potential for cross contamination. To mitigate that threat “you proliferate a lot of process steps for layer over layer deposition with a lot of diffusion and CVD,” Blalock said, confirming speculation that emerged last year.

3D Xpoint uses as many as 100 new materials, raising supply chain issues. “For some we may only have one supplier in one location…many customers will not tolerate this level of risk--they want multiple sources or locations for safety from natural disasters,” he said.

The unique vertical designs of XPoint and 3D NAND require more machines running process steps, cutting fab throughput by an estimated 15%. “We have never seen technology that challenges us at this level of de-rating,” Blalock said.

The extra gear could drive 3-5x increases in capital expenses and space needed, compared to prior new generations of flash. In addition, future generations of XPoint are expected to require more spending and space than upgrades of 3D NAND.

Thus IM Flash is pushing equipment makers to raise system productivity dramatically. To keep fab output neutral, wet processes must leap from handling 180 wafers/hour in 26 square feet of floor space for first generation products to handling a whopping 1,000 w/h in 20 square feet for third generation parts.

“Wet processing equipment is doing wonderful things…[but] dry etch is not moving much of anywhere in productivity to meet the challenge,” Blalock said, calling for 2-3x productivity gains up from traditional 20-30% improvements.

The challenges could impact the road map for XPoint. Blalock foresees a straightforward progression for 3D NAND starting at 32 layers and rising to 48 and 64 layers. XPoint initially will come in a two-layer stacks and “we clearly see four-layer stacks and some benefit from a design shrink with the right lithography…if EUV comes along three generations of 3D XPoint are fairly straightforward,” he said.

In an NVMe-based solid state drive, XPoint chips can deliver more than 95,000 I/O operations per second at a 9 microsecond latency, compared to 13,400 IOPs and 73 ms latency for flash. That should open up a variety of applications from servers running big-data analytics and machine learning to high-end games machines.

The second-generation XPoint could be useful a kind of hybrid main memory with DRAM for applications that would benefit from more density and tolerate higher latency, Blalock suggested.

A version of XPoint in DIMMs will enable up to 6 TBytes main memory in a two-socket Xeon server at about half the cost of DRAM, Diane Bryant, general manager of Intel’s data center group, said in September, suggesting the servers will ship in 2017.

是相變化記憶體
當初PRAM/ReRAM的猜想爭論 有了明確的答案

其實在3D X point memory 發表的時候，我就問過某位做過ReRAM的朋友
她當時就回答我不會是ReRAM，有90%是PCRAM
當然，她有解釋為什麼她認為不是ReRAM，只是太專業了~聽了我也是狀況外

很多人會猜ReRAM是因為3爽曾經做過研究
3爽說: ReRAM 相比 PCRAM是比較有可能微縮的選擇

至於層數的堆疊通常不會跟EUV有關，畢竟現在不用EUV也能做到10nm
而且3D X point memory 真的有必要朝著更多層堆疊的路走嗎?
就像前面提到的，若是搭配QLC NAND，或許是不用的

目前的3D NAND堆疊的層數越來越多，但是堆疊是不可能無限制疊加
再接下來來往QLC的目標走應該是很明確的

IM這招其實還滿重手的，再加上Intel自家CPU開始支援之後
3爽其實是該感受到危機了!!