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Intel SSD 將於 2015 年使用 3D NAND FLASH，每顆粒容量可達 48GB
中文來源：
http://www.hksilicon.com/kb/article...153D-NAND-FLASH
英文來源：
http://techreport.com/news/27397/in...d-256gb-per-die
引用:
32 層堆疊，提供 MLC 或是 TLC 兩種不同組態。
在日前的 Intel 投資者大會，Intel 公布了他們 SSD 產品的最新消息，將在 2015 下半年提供 3D NAND 的 SSD 固態硬碟產品。與 Micron 合作成立的 IMFT 所生產的 3D NAND 將具有 32 層堆疊，每顆 MLC 顆粒可提供 256Gb (32GB)、TLC 則是 384Gb(48GB) 的容量。
不過，Intel 並未透漏目前的 3D NAND FLASH 會採用何種製程來打造。
目前最早將 3D NAND FLASH 技術實用化的的公司還是三星的 32 層的堆疊 V-NAND，MLC 提供了 86Gb、TLC 128Gb，在容量密度部分還是 Intel、Micron 陣營比較有優勢，但是 Samsung 也同樣會在 2015 年將 V-NAND 提升，到時候兩邊在 2015 年或許會有場精彩的爭鬥。
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引用:
Intel's 3D NAND has 32 layers and 256Gb per die
by Geoff Gasior — 7:28 PM on November 20, 2014
During an investor webcast this afternoon, Intel revealed that it will offer SSDs based on 3D NAND in the second half of next year. The three-dimensional tech is the product of the firm's joint flash venture with Micron. It stacks 32 planar layers to deliver 256Gb (32GB) of storage in a single MLC die. The 3D NAND can also be packed with three bits per cell to hit 384Gb (48GB) per die.
According to Rob Crooke, senior VP and general manager of Intel's non-volatile memory group, the 3D NAND will enable 10TB SSDs "within the next couple of years." The technology can also squeeze 1TB of storage into a mobile-friendly form factor just two millimeters thick.
Crooke characterized the 3D tech as having a "breakthrough cost" but didn't provide more specifics. He did, however, suggest that Intel may not manufacture the 3D NAND itself. "We have the ability," Crooke said, but Intel will only bring production in-house "if it makes sense." Benefiting from the cost breakthrough presumably requires a substantial capital investment up front.
The 3D NAND's planar layers are built with a coarser fabrication process than the latest and greatest 2D flash. Those layers are pierced by four billion "pillars" that run vertically through the die, but Intel isn't ready to disclose specifics about the underlying process geometry.
Crooke effectively demoed working silicon by running his presentation off a prototype drive. Intel hasn't decided which market segment will get the first taste, though. Datacenters, corporate clients, and PC enthusiasts top the list.
Samsung's 32-layer V-NAND has 86Gb per die in MLC mode and 128Gb in a TLC config, giving Intel and Micron a substantial density advantage—at least per die. That said, a new generation of V-NAND should be ready by the second half of 2015. It will be interesting to see how those chips stack up against the 256Gb monsters Intel has cooked up with Micron.
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所以未來採用此技術的SSD容量會有多大?
感覺SSD又要降價了   |