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Major Member
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關於BIOS內的記憶體參數應如何調整比較好?(參數詳見內文)
DRAM PH Limit
Cycle值:1,4,8,16
DRAM Idle Limit
Cycle值:0,8,12,16,24,32,48,Disabled
DRAM Trc Timing Value
Cycle值:3,4,5,6,7,8,9,10
DRAM Trp Timing Value
Cycle值:1,2,3,4
DRAM Tras Timing Value
Cycle值:2,3,4,5,6,7,8,9
DRAM CAS Latency
Cycle值:2,2.5
SDRAM Trcd Timing Value
Cycle值:1,2,3,4
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記憶體模組內容
模組名稱:Nanya M2U25664DSH8B0G-75
序號:無
模組大小:256 MB (2 rows, 4 banks)
模組類型:Unbuffered
記憶體類型:DDR SDRAM
記憶體速度:PC2100 (133 MHz)
模組寬:64 bit
模組電壓:SSTL 2.5
錯誤偵測方法:無
更新率:減少 (7.8 us), Self-Refresh
最高 CAS 潛伏:2.5 (7.5 ns @ 133 MHz)
次高 CAS 潛伏:2.0 (10.0 ns @ 100 MHz)
記憶體模組功能
Early RAS# Precharge:未支援
Auto-Precharge:未支援
Precharge All:未支援
Write1/Read Burst:未支援
Buffered Address/Control Inputs:未支援
Registered Address/Control Inputs:未支援
On-Card PLL (Clock):未支援
Buffered DQMB Inputs:未支援
Registered DQMB Inputs:未支援
Differential Clock Input:已支援
Redundant Row Address:未支援
記憶體模組製造商
公司名稱 Nanya Technology Corp.
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